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Etching of Wide-Bandgap Chemically Resistant Semiconductors

An electrochemical study

Omschrijving

Silicon carbide (SiC) and gallium nitride (GaN) are believed to be ideal materials for the fabrication of electronic devices that can operate at high power levels, temperatures, and frequencies, because they exhibit a larger bandgap, higher breakdown electric field and higher saturated drift velocity than Si. SiC is also an attractive substrate for group III nitride-based optoelectronic devices such as blue light-emitting diodes and diode lasers. In addition, because of its exemplary chemical and mechanical properties SiC, in combination with Si, is finding wider application in sensors and micro-electromechanical systems (MEMS). Furthermore, GaN and SiC can be used as a photocathode for water splitting. For device fabrication, etching is an essential step. Dry etching techniques (i.e. reactive ion, electron cyclotron and inductively coupled plasma) are mostly used. The main disadvantages of these techniques are the high costs and the possibility of creating damage in the wafer. In many applications, wet-chemical etching is an attractive alternative. However, the stability of SiC and GaN poses a problem for open-circuit etching. Electrochemical etching offers a solution.

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Schrijver: Van Dorp, Dennis, Kelly, Fellow John (University of Edinburgh UK)
Titel: Etching of Wide-Bandgap Chemically Resistant Semiconductors
Uitgever: LAP Lambert Academic Publishing

Jaar: 2010
Taal: Engels
Pagina's: 160
Gewicht: 256 gr

EAN: 9783843378376
Afmetingen: 220 x 150 x 14 mm
Bindwijze: Paperback / softback

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Etching of Wide-Bandgap Chemically Resistant Semiconductors

An electrochemical study

Omschrijving

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